| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 32 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 33 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 34 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 35 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 36 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 37 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 38 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 39 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 40 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 41 |
38NQ52 |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 42 |
38NQ52A |
Subminiature microwave detection diode |
Tesla Elektronicke |
| 43 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
| 44 |
39NQ52B |
Subminiature microwave detection diode, color albastru |
Tesla Elektronicke |
| 45 |
39NQ52C |
Subminiature microwave detection diode, color red |
Tesla Elektronicke |
| 46 |
40NQ70 |
Point-contact microwave detection diode |
Tesla Elektronicke |
| 47 |
AA135 |
Germanium general purpose small junction diode |
AEG-TELEFUNKEN |
| 48 |
AA136 |
Germanium general purpose small junction diode |
AEG-TELEFUNKEN |
| 49 |
AN1380 |
NEW FAMILY OF DAMPER AND MODULATION DIODES |
SGS Thomson Microelectronics |
| 50 |
AN320 |
TRISIL CROWBAR TYPE PROTECTION DIODE |
SGS Thomson Microelectronics |
| 51 |
BA100 |
Silicon junction diode |
COMPELEC |
| 52 |
BA114 |
Silicon Alloyed Junction Diode |
Philips |
| 53 |
BA170 |
Silicon general application diode |
IPRS Baneasa |
| 54 |
BA171 |
Silicon general application diode |
IPRS Baneasa |
| 55 |
BA172 |
Silicon general application diode |
IPRS Baneasa |
| 56 |
BAS70-07S |
RF DETECTION DIODE |
SGS Thomson Microelectronics |
| 57 |
BAS70-07SFILM |
RF DETECTION DIODE |
ST Microelectronics |
| 58 |
BAS70-08S |
RF DETECTION DIODE |
SGS Thomson Microelectronics |
| 59 |
BAS70-08SFILM |
RF DETECTION DIODE |
ST Microelectronics |
| 60 |
BD1 |
Selenium lighting protection diode |
RFT |
| | | |
