No. |
Part Name |
Description |
Manufacturer |
31 |
IRF331R |
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
32 |
IRF332 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
33 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
34 |
IRF332 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
35 |
IRF332 |
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
36 |
IRF332 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
37 |
IRF332 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
38 |
IRF333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
39 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
40 |
IRF333 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
41 |
IRF333 |
Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
42 |
IRF333 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
43 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
44 |
PB-IRF3305 |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
45 |
PB-IRF3315L |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
46 |
PB-IRF3315S |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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