Datasheets for IRF33

Datasheets found :: 42 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
31	IRF332	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A.	General Electric Solid State
32	IRF332	4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs	Intersil
33	IRF332	Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
34	IRF332	N-CHANNEL POWER MOSFETS	Samsung Electronic
35	IRF333	N-Channel Power MOSFETs/ 5.5A/ 350 V/400V	Fairchild Semiconductor
36	IRF333	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.	General Electric Solid State
37	IRF333	4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs	Intersil
38	IRF333	Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3	New Jersey Semiconductor
39	IRF333	N-CHANNEL POWER MOSFETS	Samsung Electronic
40	PB-IRF3305	Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	International Rectifier
41	PB-IRF3315L	Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package	International Rectifier
42	PB-IRF3315S	Leaded 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package	International Rectifier

Datasheets found :: 42 Page: | 1 | 2 |