| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 32 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 33 |
IRF353 |
13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ohm, Avalanche Rated*, N-Channel Power MOSFET FN1826.2 |
Intersil |
| 34 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 35 |
IRF353 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 36 |
IRF353 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A |
Siliconix |
| 37 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 38 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
| 39 |
PB-IRF3515L |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 40 |
PB-IRF3515S |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| | | |
