| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF630N |
Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 32 |
IRF630NL |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 33 |
IRF630NLPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 34 |
IRF630NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 35 |
IRF630NS |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 36 |
IRF630NSPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 37 |
IRF630NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 38 |
IRF630NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 39 |
IRF630NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 40 |
IRF630NSTRR |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 41 |
IRF630S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 42 |
IRF630S |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 43 |
IRF630S |
N-channel TrenchMOS transistor |
Philips |
| 44 |
IRF630S |
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 45 |
IRF630S |
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
ST Microelectronics |
| 46 |
IRF630SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 47 |
IRF630ST4 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 48 |
IRF630STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 49 |
IRF630STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 50 |
IRF631 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 51 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 52 |
IRF631 |
Trans MOSFET N-CH 150V 9A |
New Jersey Semiconductor |
| 53 |
IRF632 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 54 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 55 |
IRF632 |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 56 |
IRF632R |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 57 |
IRF633 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 58 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 59 |
IRF633 |
Trans MOSFET N-CH 150V 8A |
New Jersey Semiconductor |
| 60 |
IRF634 |
Advanced Power MOSFET |
Fairchild Semiconductor |
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