No. |
Part Name |
Description |
Manufacturer |
31 |
IRF822 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
32 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
33 |
IRF822 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
34 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
35 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
36 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
37 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
38 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
39 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
40 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
41 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
42 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
43 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
44 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
45 |
IRF8252 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
46 |
IRF8252PBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
47 |
IRF8252TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
48 |
IRF8252TRPBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
49 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
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