| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF822 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 32 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 33 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 34 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 35 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 36 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 37 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 38 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 39 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
| 40 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
| 41 |
IRF8252 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 42 |
IRF8252PBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
| 43 |
IRF8252TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 44 |
IRF8252TRPBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
| 45 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| | | |
