No. |
Part Name |
Description |
Manufacturer |
31 |
1N4129 |
Silicon Zener Diode 250 Milliwatt Low Noise 62V |
Transitron Electronic |
32 |
1N4130 |
Silicon Zener Diode 250 Milliwatt Low Noise 68V |
Transitron Electronic |
33 |
1N4131 |
Silicon Zener Diode 250 Milliwatt Low Noise 75V |
Transitron Electronic |
34 |
1N4132 |
Silicon Zener Diode 250 Milliwatt Low Noise 82V |
Transitron Electronic |
35 |
1N4133 |
Silicon Zener Diode 250 Milliwatt Low Noise 87V |
Transitron Electronic |
36 |
1N4134 |
Silicon Zener Diode 250 Milliwatt Low Noise 91V |
Transitron Electronic |
37 |
1N4135 |
Silicon Zener Diode 250 Milliwatt Low Noise 100V |
Transitron Electronic |
38 |
1N4370 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V |
Transitron Electronic |
39 |
1N4370A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V, tolerance ±5% |
Transitron Electronic |
40 |
1N4371 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V |
Transitron Electronic |
41 |
1N4371A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V, tolerance ±5% |
Transitron Electronic |
42 |
1N4372 |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
43 |
1N4372A |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V, tolerance ±5% |
Transitron Electronic |
44 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
45 |
AN257 |
THERMAL CHARACTERISTICS OF THE MULTIWATT PACKAGE |
SGS Thomson Microelectronics |
46 |
AS6UA25616 |
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
47 |
AS6UA25616-BI |
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
48 |
AS6UA25617 |
1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables |
Alliance Semiconductor |
49 |
AS6UA25617-BC |
1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables |
Alliance Semiconductor |
50 |
AS6UA25617-BI |
1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables |
Alliance Semiconductor |
51 |
AS6UA25617-TC |
1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables |
Alliance Semiconductor |
52 |
AS6UA25617-TI |
1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables |
Alliance Semiconductor |
53 |
AS6UA51216 |
1.65V to 3.6V 512K x 16 Intelliwatt low power CMOS SRAM with one chip enable |
Alliance Semiconductor |
54 |
AS6UA51216-BC |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
55 |
AS6UA51216-BI |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
56 |
AS6UA51216-TC |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
57 |
AS6UA51216-TI |
1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
58 |
AS6UA5128 |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM |
Alliance Semiconductor |
59 |
AS6UA5128-BC |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM |
Alliance Semiconductor |
60 |
AS6UA5128-BC |
2.3V to 3.6V 512K��8 Intelliwatt low-power CMOS SRAM |
Semicoa Semiconductor |
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