| No. |
Part Name |
Description |
Manufacturer |
| 31 |
LNJ411K8YRA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 32 |
LNJ411K8YRU |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 33 |
LNJ412K82RA1 |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 34 |
LNJ412K84RA |
Surface-mount LEDs |
Panasonic |
| 35 |
LNJ412K8YRA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 36 |
LNJ412W83RA1 |
Opto Electronic Devices |
Panasonic |
| 37 |
LNJ414K82RA |
Surface-mount LEDs |
Panasonic |
| 38 |
LNJ414K84RA |
Surface-mount LEDs |
Panasonic |
| 39 |
LNJ414K8YRA |
Opto Electronic Devices |
Panasonic |
| 40 |
LNJ416C84RA |
Opto Electronic Devices |
Panasonic |
| 41 |
LNJ416K54RW |
InGaAIP S-GW Type |
Panasonic |
| 42 |
LNJ416Q8YRA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 43 |
LNJ416Q8YRU |
Opto Electronic Devices |
Panasonic |
| 44 |
LNJ418Q8YRA |
Opto Electronic Devices |
Panasonic |
| 45 |
LNJ418Q8YRU |
Opto Electronic Devices |
Panasonic |
| 46 |
MJ410 |
5 AMPERE POWER TRANSISTOR NPN SILICON |
Motorola |
| 47 |
MJ410 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 48 |
MJ411 |
5A power transistor NPN silicon 100W 300V |
Motorola |
| 49 |
MJ411 |
Bipolar NPN Device |
SemeLAB |
| 50 |
MJ413 |
Ic=10A, Vce=5.0V transistor |
MCC |
| 51 |
MJ413 |
10 Amp NPN Silicon Power Transistors 125W |
Micro Commercial Components |
| 52 |
MJ413 |
High-voltage NPN silicon transistor |
Motorola |
| 53 |
MJ413 |
10 AMPERE POWER TRANSISTORS NPN SILICON |
Motorola |
| 54 |
MJ413 |
Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 55 |
MJ413 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 56 |
NX8560LJ413-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1541.36 nm. Frequency 194.50 THz. FC-UPC connector. |
NEC |
| 57 |
NX8560LJ413-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1541.36 nm. Frequency 194.50 THz. SC-UPC connector. |
NEC |
| 58 |
NX8560SJ413-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1541.349 nm. Frequency 194.50 THz. FC-UPC connector. |
NEC |
| 59 |
NX8560SJ413-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1541.349 nm. Frequency 194.50 THz. SC-UPC connector. |
NEC |
| 60 |
NX8560SJ417-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. FC-UPC connector. |
NEC |
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