| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ATV15CJ521A-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=444.6V, Tolerance=10% |
Comchip Technology |
| 32 |
ATV15CJ521CA-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=444.6V, Tolerance=5% |
Comchip Technology |
| 33 |
ERJL03UJ52MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 34 |
ERJL06UJ52MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 35 |
ERJL08UJ52MV |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 36 |
ERJL12UJ52MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 37 |
ERJL14UJ52MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 38 |
ERJL1DUJ52MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 39 |
ERJL1WUJ52MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 40 |
K4J52324QC |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 41 |
K4J52324QC-BC14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 42 |
K4J52324QC-BC16 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 43 |
K4J52324QC-BC20 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 44 |
K4J52324QC-BJ12 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 45 |
K4J52324QC-BJ14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
| 46 |
MI-J52-IA |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 47 |
MI-J52-IY |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 48 |
MI-J52-IZ |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 49 |
MI-J52-MA |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 50 |
MI-J52-MY |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 51 |
MI-J52-MZ |
Military DC-DC Converters 10 to 50W |
Vicor Corporation |
| 52 |
NX8560LJ525-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. FC-UPC connector. |
NEC |
| 53 |
NX8560LJ525-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1552.52 nm. Frequency 193.10 THz. SC-UPC connector. |
NEC |
| 54 |
NX8560SJ521-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. FC-UPC connector. |
NEC |
| 55 |
NX8560SJ521-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.122 nm. Frequency 193.15 THz. SC-UPC connector. |
NEC |
| 56 |
NX8560SJ525-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. FC-UPC connector. |
NEC |
| 57 |
NX8560SJ525-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.524 nm. Frequency 193.10 THz. SC-UPC connector. |
NEC |
| 58 |
NX8560SJ529-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. FC-UPC connector. |
NEC |
| 59 |
NX8560SJ529-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. SC-UPC connector. |
NEC |
| 60 |
SMAJ5283 |
Current Limiter Diode |
Microsemi |
| | | |
