| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4N35 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 32 |
K4N35 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 33 |
K4N36 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 34 |
K4N36 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 35 |
K4N37 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 36 |
K4N37 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 37 |
K4N38 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 38 |
K4N38 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 39 |
K4N38A |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 40 |
K4N38A |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 41 |
K4N56163QF |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 42 |
K4N56163QF-GC |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 43 |
K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 44 |
K4N56163QF-GC30 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 45 |
K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 46 |
PHK4NQ10T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 47 |
PHK4NQ20T |
TrenchMOS(tm)standard level FET |
Philips |
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