| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM44C4100CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 32 |
KM44C4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 33 |
KM44C4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 34 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 35 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 36 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 37 |
KM44C4103C |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
Samsung Electronic |
| 38 |
KM44C4103CK-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 39 |
KM44C4103CK-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 40 |
KM44C4103CKL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 41 |
KM44C4103CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 42 |
KM44C4103CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 43 |
KM44C4103CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 44 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 45 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 46 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 47 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 48 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 49 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 50 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 51 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 52 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 53 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 54 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 55 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 56 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 57 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 58 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 59 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 60 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
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