No. |
Part Name |
Description |
Manufacturer |
31 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
32 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
33 |
2SA1266 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
34 |
2SA1266L |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
35 |
2SA1270 |
Transistors |
Korea Electronics (KEC) |
36 |
2SA1271 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
37 |
2SA1273 |
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS) |
Korea Electronics (KEC) |
38 |
2SC3198 |
Transistors |
Korea Electronics (KEC) |
39 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
40 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
41 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
42 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
43 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
44 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
45 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
46 |
7429 |
VOLTAGE DETECTOR |
Korea Electronics (KEC) |
47 |
7805 |
THREE TERMINAL POSITIVE VOLTAGE REGULATORS |
Korea Electronics (KEC) |
48 |
A223 |
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING/ INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
Korea Electronics (KEC) |
49 |
A840 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (VERTICAL DEFLECTION OUTPUT CIRCUIT FOR COLOR TELEVISION) |
Korea Electronics (KEC) |
50 |
AWT6109 |
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. |
Anadigics Inc |
51 |
AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. |
Anadigics Inc |
52 |
B10A100VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
53 |
B10A45V |
SCHOTTKY BARRIER TYPE DIODE (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
54 |
B10A45VI |
Schottky Barrier Diode |
Korea Electronics (KEC) |
55 |
B10A45VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
56 |
B10A60 |
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
57 |
B10A60VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
58 |
B10A90VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
59 |
B1366 |
TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
Korea Electronics (KEC) |
60 |
B15A45V |
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
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