| No. |
Part Name |
Description |
Manufacturer |
| 31 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 32 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 33 |
IKW20N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
| 34 |
IKW25T120 |
IGBTs & DuoPacks - 25A 1200V TO247 IGBT+Diode |
Infineon |
| 35 |
M24C02-KW21/150 |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial IC Bus EEPROM |
ST Microelectronics |
| 36 |
SKW20N60 |
IGBTs & DuoPacks - 20A 600V TO247AC IGBT+Diode |
Infineon |
| 37 |
SKW20N60 |
Fast S-IGBT in NPT-Technology with An... |
Infineon |
| 38 |
SKW20N60HS |
IGBTs & DuoPacks - 20A 600V TO247 IGBT+Diode |
Infineon |
| 39 |
SKW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT+Diode |
Infineon |
| | | |
