No. |
Part Name |
Description |
Manufacturer |
31 |
100329DMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
32 |
100329F |
Low Power Octal ECL/TTL Bidirectional Translator with Register |
National Semiconductor |
33 |
100329FCQR |
Low power octal ECL/TTL bidirectional translator with register. Commercial grade device with burn-in. |
National Semiconductor |
34 |
100329FMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
35 |
100329QCQR |
Low power octal ECL/TTL bidirectional translator with register. Commercial grade device with burn-in. |
National Semiconductor |
36 |
100329QMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
37 |
1004_XC2173 |
ICs for use with Crystal Oscillators (PLL built-In) |
Torex Semiconductor |
38 |
10567A |
10567A 50% Dual Beam Splitter |
Agilent (Hewlett-Packard) |
39 |
11DF4 |
Diode Schottky 30V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
40 |
11DQ03 |
Diode Schottky 30V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
41 |
11DQ04 |
Diode Schottky 40V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
42 |
11DQ05 |
Diode Schottky 50V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
43 |
11DQ06 |
Diode Schottky 60V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
44 |
11DQ10 |
Diode Schottky 100V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
45 |
1394 |
IEEE 1394 SERIAL BUS CONTROLLER |
Fujitsu Microelectronics |
46 |
15040-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE Electronics |
47 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
48 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
49 |
15043-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 145VDC |
NTE Electronics |
50 |
15044-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 230VDC |
NTE Electronics |
51 |
15045-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 300VDC |
NTE Electronics |
52 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
53 |
15047-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 470VDC |
NTE Electronics |
54 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
55 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
56 |
15050AC |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. |
NTE Electronics |
57 |
1P2G125QYEPR |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
58 |
1P2G125QYEPR |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
59 |
21DQ03 |
Diode Schottky 40V 2A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
60 |
21DQ06 |
Diode Schottky 60V 2A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
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