| No. |
Part Name |
Description |
Manufacturer |
| 31 |
181RKI40S90 |
Phase control thyristor |
International Rectifier |
| 32 |
181RKI80 |
PHASE CONTROL THYRISTORS |
International Rectifier |
| 33 |
181RKI80S90 |
Phase control thyristor |
International Rectifier |
| 34 |
182RKI100 |
Phase control thyristor |
International Rectifier |
| 35 |
182RKI100S90 |
Phase control thyristor |
International Rectifier |
| 36 |
182RKI40 |
Phase control thyristor |
International Rectifier |
| 37 |
182RKI40S90 |
Phase control thyristor |
International Rectifier |
| 38 |
182RKI80 |
Phase control thyristor |
International Rectifier |
| 39 |
182RKI80S90 |
Phase control thyristor |
International Rectifier |
| 40 |
21-0136F |
PACKAGE OUTLINE 12,16L THIN QFN, 3x3x0.8mm |
MAXIM - Dallas Semiconductor |
| 41 |
2EL2 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 42 |
2EL3 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 43 |
2EL4 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 44 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 45 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 46 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 47 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 48 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 49 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 50 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 51 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 52 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 53 |
2N6344-D |
Silicon Bidirectional Thyristors |
ON Semiconductor |
| 54 |
2N6344A-D |
Silicon Bidirectional Thyristors Triacs |
ON Semiconductor |
| 55 |
2N6349 |
Silicon Bidirectional Thyristors |
ON Semiconductor |
| 56 |
3T064A |
58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 57 |
3T064B |
58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 58 |
3T072A |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 59 |
3T072B |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 60 |
3T080A |
75V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
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