No. |
Part Name |
Description |
Manufacturer |
31 |
HYB3165165TL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
32 |
HYB3165400ATL-60 |
16M x 4bit DRAM |
Siemens |
33 |
HYB3165405ATL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
34 |
HYB3165405BTL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
35 |
HYB3165405TL-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
36 |
HYB3165800ATL-60 |
8M x 8bit DRAM |
Siemens |
37 |
HYB3165805ATL-60 |
4M x 16 Bit 4k EDO DRAM Low Power |
Infineon |
38 |
HYB3165805ATL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
39 |
HYB3165805BTL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
40 |
HYB3165805TL-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
41 |
HYB3166160ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
42 |
HYB3166165ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
43 |
HYB3166165BTL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
44 |
HYB511000BJL-60 |
1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
45 |
HYB514256BJL-60 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
46 |
HYB514256BL-60 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
47 |
HYB514400BJL-60 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
48 |
HYB514400BJL-60 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
49 |
HYB514400BTL-60 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
50 |
HYB514405BJL-60 |
1M x 4-Bit Dynamic RAM |
Siemens |
51 |
IC41C44002ASL-60J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
52 |
IC41C44002ASL-60T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
53 |
IC41LV44002ASL-60J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
54 |
IC41LV44002ASL-60T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
55 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
56 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
57 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
58 |
KM416V1004CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
59 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
60 |
KM416V1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
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