| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IS61LF25636T-9TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 32 |
IS61LF25636T-9TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 33 |
IS61NLF25618-10B |
256K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 34 |
IS61NLF25618-10TQ |
256K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 35 |
IS61NLF25618-10TQI |
256K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 36 |
IS61NLF25618-9B |
256K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 37 |
IS61NLF25618-9TQ |
256K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 38 |
IS61NLF25632 |
SRAM |
Integrated Silicon Solution Inc |
| 39 |
IS61NLF25632-10B |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 40 |
IS61NLF25632-10TQ |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 41 |
IS61NLF25632-10TQI |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 42 |
IS61NLF25636 |
SRAM |
Integrated Silicon Solution Inc |
| 43 |
IS61NLF25636-10B |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 44 |
IS61NLF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 45 |
IS61NLF25636-10TQ |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 46 |
IS61NLF25636-10TQI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 47 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 48 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 49 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 50 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 51 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 52 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 53 |
LF155-LF255-LF355 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
ST Microelectronics |
| 54 |
LF156-LF256-LF356 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
ST Microelectronics |
| 55 |
LF157-LF257-LF357 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
ST Microelectronics |
| 56 |
LF251 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 57 |
LF251 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER |
SGS Thomson Microelectronics |
| 58 |
LF251 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
ST Microelectronics |
| 59 |
LF251-LF351 |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER |
ST Microelectronics |
| 60 |
LF253 |
WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS |
SGS Thomson Microelectronics |
| | | |
