| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1214-300V |
Pulsed Power L-Band (Si) |
Microsemi |
| 32 |
1214-32L |
Pulsed Power L-Band (Si) |
Microsemi |
| 33 |
1214-370M |
Pulsed Power L-Band (Si) |
Microsemi |
| 34 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 35 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 36 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 37 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 38 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 39 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 40 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 41 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 42 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 43 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 44 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 45 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 46 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
| 47 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 48 |
2729-125 |
Pulsed Power S-Band (Si) |
Microsemi |
| 49 |
2729-170 |
Pulsed Power S-Band (Si) |
Microsemi |
| 50 |
2729-300P |
Pulsed Power S-Band (Si) |
Microsemi |
| 51 |
2731-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 52 |
2731-20 |
Pulsed Power S-Band (Si) |
Microsemi |
| 53 |
2731-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 54 |
2931-150 |
Pulsed Power S-Band (Si) |
Microsemi |
| 55 |
3134-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 56 |
3134-180P |
Pulsed Power S-Band (Si) |
Microsemi |
| 57 |
3134-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 58 |
3134-65M |
Pulsed Power S-Band (Si) |
Microsemi |
| 59 |
5962-9763401HXC |
28 V, 200 W Pulsed DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 60 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
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