| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MCR100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 32 |
MCR100-8 |
600V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 33 |
Q62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 34 |
Q62702-F1271 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 35 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 36 |
Q62702-F1314 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
Siemens |
| 37 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 38 |
Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 39 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 40 |
Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
Siemens |
| 41 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 42 |
Q62702-F1501 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 43 |
Q62702-F1572 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 44 |
Q62702-F1611 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 45 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 46 |
Q62702-F938 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 47 |
STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 48 |
STN1NC60 |
N-CHANNEL 600V 12 OHM 0.3A SOT-223 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 49 |
STN1NC60 |
N-CHANNEL 600V 12 OHM 0.3A SOT-223 POWERMESH II MOSFET |
ST Microelectronics |
| 50 |
STQ1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A TO-92 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 51 |
STQ1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A TO-92 POWERMESH II MOSFET |
ST Microelectronics |
| 52 |
STQ1NC60R |
N-CHANNEL 600V 12 OHM 0.3A TO-92 POWERMESH II MOSFET |
ST Microelectronics |
| 53 |
STS1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SO-8 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 54 |
STS1NC60 |
N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 55 |
STS1NC60 |
N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFET |
ST Microelectronics |
| 56 |
STS1NK60Z |
N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 57 |
VNA-21 |
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz |
Mini-Circuits |
| 58 |
VNA-22 |
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz |
Mini-Circuits |
| 59 |
VNA-23 |
High Directivity Monolithic Amplifier 50OHM 0.5 to 2.5 GHz |
Mini-Circuits |
| 60 |
VNA-28 |
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz |
Mini-Circuits |
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