| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CURNM105-HF |
Halogen Free Ultra Fast Recovery Rectifiers, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
| 32 |
CX16M105K |
Subminiature, Leaded Solid Tantalum Capacitors |
Vishay |
| 33 |
CX16M105M |
Subminiature, Leaded Solid Tantalum Capacitors |
Vishay |
| 34 |
EFM105 |
1A FAST RECOVERY SMA DIODES |
Leshan Radio Company |
| 35 |
EFM105 |
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 36 |
EFM105B |
Recovery Rectifier |
Rectron Semiconductor |
| 37 |
ERJT14LM105U |
Anti-Pulse Small & High Power Thick Film Chip Resistors |
Panasonic |
| 38 |
ESM105 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SUPER FAST RECTIFIER |
DC Components |
| 39 |
ESM105 |
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 40 |
FFM105 |
Fast recovery type |
Formosa MS |
| 41 |
FFM105 |
1A FAST RECOVERY SMA DIODES |
Leshan Radio Company |
| 42 |
FFM105 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A. |
Rectron Semiconductor |
| 43 |
FFM105-M |
Fast recovery type |
Formosa MS |
| 44 |
FFM105B |
Recovery Rectifier |
Rectron Semiconductor |
| 45 |
FFM105W |
Recovery Rectifier |
Rectron Semiconductor |
| 46 |
FSM105 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT FAST RECOVERY RECTIFIER |
DC Components |
| 47 |
FSM105 |
1.0 AMP SURFACE MOUNT FAST RECOVERY RECTIFIERS |
Formosa MS |
| 48 |
FSM105 |
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 49 |
FU-68PDF-V510M105B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 50 |
FU-68PDF-V520M105B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 51 |
FU-68SDF-V802M105B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 52 |
FU-68SDF-V810M105B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 53 |
HFM105 |
Ultra fast recovery type |
Formosa MS |
| 54 |
HFM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 55 |
HFM105-M |
Ultra fast recovery type |
Formosa MS |
| 56 |
HFM105B |
Recovery Rectifier |
Rectron Semiconductor |
| 57 |
HFM105W |
Recovery Rectifier |
Rectron Semiconductor |
| 58 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
| 59 |
HSM105 |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER |
DC Components |
| 60 |
HSM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
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