DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for M416C1

Datasheets found :: 118
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
31 KM416C1004BT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
32 KM416C1004BT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
33 KM416C1004BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
34 KM416C1004BT-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
35 KM416C1004BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
36 KM416C1004BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
37 KM416C1004BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
38 KM416C1004BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
39 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
40 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
41 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
42 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
43 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
44 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
45 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
46 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
47 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
48 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
49 KM416C1004CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
50 KM416C1004CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
51 KM416C1004CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
52 KM416C1004CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
53 KM416C1004CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
54 KM416C1004CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
55 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
56 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
57 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
58 KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
59 KM416C1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
60 KM416C1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic


Datasheets found :: 118
Page: | 1 | 2 | 3 | 4 |



© 2024 - www Datasheet Catalog com