| No. |
Part Name |
Description |
Manufacturer |
| 31 |
LK112M50TR |
LOW NOISE LOW DROP VOLTAGE REGULATOR WITH SHUTDOWN FUNCTION |
SGS Thomson Microelectronics |
| 32 |
LK112M50TR |
LOW NOISE LOW DROP VOLTAGE REGULATOR WITH SHUTDOWN FUNCTION |
ST Microelectronics |
| 33 |
LK112SM50TR |
LOW NOISE LOW DROP VOLTAGE REGULATOR WITH SHUTDOWN FUNCTION |
SGS Thomson Microelectronics |
| 34 |
LK112SM50TR |
LOW NOISE LOW DROP VOLTAGE REGULATOR WITH SHUTDOWN FUNCTION |
ST Microelectronics |
| 35 |
QM50TB-24 |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 36 |
QM50TB-24B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 37 |
QM50TB-2H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 38 |
QM50TB-2HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 39 |
QM50TF-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 40 |
QM50TX-H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 41 |
QM50TX-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 42 |
RM50TC-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 43 |
RM50TC-24 |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 44 |
RM50TC-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 45 |
RM50TC-2H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 46 |
RM50TC-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 47 |
RM50TC-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 48 |
RM50TC-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 49 |
RM50TC-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 50 |
STB12NM50T4 |
N-CHANNEL 500V - 0.30 OHM - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
ST Microelectronics |
| 51 |
STB20NM50T4 |
N-CHANNEL 550V @ Tjmax - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH MOSFET |
ST Microelectronics |
| 52 |
STD3NM50T4 |
N-CHANNEL 550V @Tjmax - 2.5 OHM - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 53 |
STD5NM50T4 |
N-CHANNEL 550V @Tjmax - 0.7 OHM - 7.5A DPAK/IPAK MDMESH POWER MOSFET |
ST Microelectronics |
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