| No. |
Part Name |
Description |
Manufacturer |
| 31 |
APT60M75JVR |
MOSFET |
Microsemi |
| 32 |
APT60M75L2FLL |
POWER MOS 7 600V 73A 0.075 Ohm |
Advanced Power Technology |
| 33 |
APT60M75L2FLLG |
FREDFETs |
Microsemi |
| 34 |
APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm |
Advanced Power Technology |
| 35 |
APT60M75L2LLG |
MOSFET |
Microsemi |
| 36 |
APT60M75PVR |
POWER MOS V 600V 60.5A 0.075 Ohm |
Advanced Power Technology |
| 37 |
APTC80AM75SCG |
Phase Leg + Series And Parallel Diodes |
Microsemi |
| 38 |
APTM50HM75FT3G |
Full Bridge |
Microsemi |
| 39 |
APTM50HM75FTG |
Full Bridge |
Microsemi |
| 40 |
APTM50HM75SCTG |
Full Bridge + Series And Parallel Diodes |
Microsemi |
| 41 |
APTM50HM75STG |
Full Bridge + Series And Parallel Diodes |
Microsemi |
| 42 |
AU7555D |
ICM7555; General purpose CMOS timer |
Philips |
| 43 |
BCM7501 |
Single-Link DVI Transmitter with HDCP |
Broadcom |
| 44 |
BSM75GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 45 |
BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values |
Eupec GmbH |
| 46 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 47 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 48 |
BSM75GB60DLC |
Hchstzulssige Werte Maximum rated values |
Eupec GmbH |
| 49 |
BSM75GD120DN2 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 50 |
CM75BU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 51 |
CM75BU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 52 |
CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 53 |
CM75DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 54 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 55 |
CM75DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 56 |
CM75DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 57 |
CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 58 |
CM75DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 59 |
CM75DU-24F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 60 |
CM75DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
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