| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MTP36N06V |
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
Motorola |
| 32 |
MTP36N06V |
Power MOSFET 32 Amps, 60 Volts |
ON Semiconductor |
| 33 |
MTP36N06V-D |
Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 |
ON Semiconductor |
| 34 |
MTP3N100 |
N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. |
Motorola |
| 35 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 36 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 37 |
MTP3N120E |
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 38 |
MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 39 |
MTP3N25E |
TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 40 |
MTP3N35 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V |
Fairchild Semiconductor |
| 41 |
MTP3N35 |
N-CHANNEL TMOS POWER FET 3A 350V 3.3 ohms |
Motorola |
| 42 |
MTP3N40 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V |
Fairchild Semiconductor |
| 43 |
MTP3N40 |
N-CHANNEL TMOS POWER FET 3A 400V 3.3 ohms |
Motorola |
| 44 |
MTP3N50 |
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
Motorola |
| 45 |
MTP3N50E |
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
Motorola |
| 46 |
MTP3N50E |
3 Amp TO-220AB, N-Channel, VDSS 500 |
ON Semiconductor |
| 47 |
MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 48 |
MTP3N55 |
N-CHANNEL TMOS POWER FET 3A 550V 2.5 ohms |
Motorola |
| 49 |
MTP3N55 |
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 50 |
MTP3N60 |
N-CHANNEL TMOS POWER FET 3A 600V 2.5 ohms |
Motorola |
| 51 |
MTP3N60 |
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 52 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 53 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 54 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 55 |
MTP3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
Motorola |
| 56 |
MTP3N60E |
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 57 |
MTP3N60E |
3 Amp TO-220AB, N-Channel, VDSS 600 |
ON Semiconductor |
| 58 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 59 |
MTP3N60F1 |
Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
| 60 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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