No. |
Part Name |
Description |
Manufacturer |
31 |
MTW35N15E |
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
Motorola |
32 |
MTW35N15E |
OBSOLETE - Power MOSFET 35 Amps, 150 Volts |
ON Semiconductor |
33 |
MTW35N15E-D |
Power MOSFET 35 Amps, 150 Volts N-Channel TO-247 |
ON Semiconductor |
34 |
MTW45N10 |
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
Motorola |
35 |
MTW45N10E |
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
Motorola |
36 |
MTW45N10E-D |
Power MOSFET 45 Amps, 100 Volts |
ON Semiconductor |
37 |
MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
38 |
MTW4N80E |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
39 |
MTW54N05E |
High Energy in the Avalanche and Commutation modes |
Motorola |
40 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
41 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
42 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
43 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
44 |
MTW6N60E |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
Motorola |
45 |
MTW7N80E |
TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM |
Motorola |
46 |
MTW7N80E |
OBSOLETE - Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
47 |
MTW7N80E-D |
Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
48 |
MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR |
Motorola |
49 |
MTW8N60E |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Motorola |
50 |
MTW8N60E |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
ON Semiconductor |
51 |
MTW8N60E-D |
Power MOSFET 8 Amps, 600 Volts N-Channel TO-247 |
ON Semiconductor |
52 |
MTW8N60E/D |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Motorola |
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