| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MV1648 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 82.0pF |
Motorola |
| 32 |
MV1650 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 33 |
MV1650 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 100.0pF |
Motorola |
| 34 |
MV1652 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 35 |
MV1652 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 36 |
MV1654 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 37 |
MV1654 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 38 |
MV1656 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 39 |
MV1656 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 40 |
MV1658 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 41 |
MV1658 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 42 |
MV1660 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 43 |
MV1660 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 44 |
MV1662 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 45 |
MV1662 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 46 |
MV1664 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 47 |
MV1664 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 48 |
MV1666 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 49 |
MV1666 |
Silicon epicap epitaxial passivated tuning diode |
Motorola |
| 50 |
PMV160UP |
20 V, 1.2 A P-channel Trench MOSFET |
Nexperia |
| 51 |
PMV160UP |
20 V, 1.2 A P-channel Trench MOSFET |
NXP Semiconductors |
| 52 |
PMV164ENEA |
60 V, N-channel Trench MOSFET |
Nexperia |
| 53 |
PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET |
Nexperia |
| 54 |
PMV16XN |
20 V, N-channel Trench MOSFET |
Nexperia |
| 55 |
SMV1679A |
VOLTAGE CONTROLLED OSCILLATOR |
Z communications |
| 56 |
SMV1679L |
VOLTAGE CONTROLLED OSCILLATOR |
Z communications |
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