| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BFG11/X |
NPN 2 GHz RF power transistor |
Philips |
| 32 |
BFG11W |
NPN 2 GHz power transistor |
Philips |
| 33 |
BFG11W/X |
NPN 2 GHz power transistor |
Philips |
| 34 |
BFG11W/X |
NPN 2 GHz power transistor |
Philips |
| 35 |
BFG16 |
NPN 2 GHz wideband transistor |
Philips |
| 36 |
BFG16A |
NPN 2 GHz wideband transistor |
Philips |
| 37 |
BFR53 |
NPN 2 GHz wideband transistor |
Philips |
| 38 |
BFT25 |
NPN 2 GHz wideband transistor |
NXP Semiconductors |
| 39 |
BFT25 |
NPN 2 GHz wideband transistor |
Philips |
| 40 |
BQ500210 |
Generation 2 Qi Compliant Wireless Power Transmitter Manager |
Texas Instruments |
| 41 |
BQ500210RGZR |
Generation 2 Qi Compliant Wireless Power Transmitter Manager 48-VQFN -40 to 110 |
Texas Instruments |
| 42 |
BQ500210RGZT |
Generation 2 Qi Compliant Wireless Power Transmitter Manager 48-VQFN -40 to 110 |
Texas Instruments |
| 43 |
BQ51011 |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 44 |
BQ51011YFFR |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 45 |
BQ51011YFFT |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 46 |
BQ51013 |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 47 |
BQ51013YFFR |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 48 |
BQ51013YFFT |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
| 49 |
C-5570EG |
Common cathode hi.effi red/green 2 inch, 5x7 dot matrix display |
PARA Light |
| 50 |
CAT3200HU2 |
DC-DC, 2x Charge Pump, 5.0 V & Adjustable, 100 mA (UDFN 2 mm x 2 mm) |
ON Semiconductor |
| 51 |
E2801 |
GR-253-Core SMC (SONET minimum clock) and ITU G.813 Option 2 Minature Surface Mount TCXO |
Semtech |
| 52 |
E2801LF |
GR-253-Core SMC (SONET minimum clock) and ITU G.813 Option 2 Minature Surface Mount TCXO |
Semtech |
| 53 |
HN1A01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 54 |
HN1A02F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 55 |
HN1A07F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 56 |
HN1A26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 57 |
HN1B04F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 58 |
HN1B04FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 59 |
HN1B26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 60 |
HN1C01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| | | |
