No. |
Part Name |
Description |
Manufacturer |
31 |
CDCLVD110AVFR |
1-to-10 LVDS Clock Buffer up to 1100MHz with Minimum Skew for Clock Distribution 32-LQFP -40 to 85 |
Texas Instruments |
32 |
CDCLVD110AVFRG4 |
1-to-10 LVDS Clock Buffer up to 1100MHz with Minimum Skew for Clock Distribution 32-LQFP -40 to 85 |
Texas Instruments |
33 |
CDCLVD110VFG4 |
1-to-10 LVDS clock buffer up to 900MHz with minimum skew for clock distribution 32-LQFP -40 to 85 |
Texas Instruments |
34 |
CDCLVD110VFRG4 |
1-to-10 LVDS clock buffer up to 900MHz with minimum skew for clock distribution 32-LQFP -40 to 85 |
Texas Instruments |
35 |
CXD2930BR |
GPS LSI with Built-in 32-bit RISC CPU |
SONY |
36 |
CY2040 |
32 kHz and 24 MHz Clock Generator with Precision 32 kHz Input |
Cypress |
37 |
CY2040-2 |
32 kHz and 24 MHz Clock Generator with Precision 32 kHz Input |
Cypress |
38 |
CY2040-3 |
32 kHz and 24 MHz Clock Generator with Precision 32 kHz Input |
Cypress |
39 |
CY2040WAF |
Programmable Clock Die With Precision 32-kHz Input |
Cypress |
40 |
CY2040ZC-3 |
32 kHz and 24 MHz Clock Generator with Precision 32 kHz Input |
Cypress |
41 |
DS1977-F5# |
iButton 32KB EEPROM |
MAXIM - Dallas Semiconductor |
42 |
HN29V51211 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
43 |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
44 |
LMH6517SQ/NOPB |
Low Power, Low Noise IF and Baseband Dual 16 bit ADC Driver With Digitally Controlled Gain 32-WQFN -40 to 85 |
Texas Instruments |
45 |
LMH6517SQE/NOPB |
Low Power, Low Noise IF and Baseband Dual 16 bit ADC Driver With Digitally Controlled Gain 32-WQFN -40 to 85 |
Texas Instruments |
46 |
LMH6517SQX/NOPB |
Low Power, Low Noise IF and Baseband Dual 16 bit ADC Driver With Digitally Controlled Gain 32-WQFN -40 to 85 |
Texas Instruments |
47 |
M28F256-12B1 |
Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access |
SGS Thomson Microelectronics |
48 |
M28F256-12C1 |
Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access (PLCC) |
SGS Thomson Microelectronics |
49 |
M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
50 |
M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
51 |
M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Datasheet |
Samsung Electronic |
52 |
M366S3253CTS |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet |
Samsung Electronic |
53 |
M366S3253CTU |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
54 |
M366S3253DT |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
55 |
M366S3253DTS |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
56 |
M366S3253DTU |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
57 |
M366S6453BT0 |
64M x 64 SDRAM DIMM based on 32M x 8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
58 |
M366S6453CTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
59 |
M366S6453DTS |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
60 |
M366S6453DTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs Data Sheet |
Samsung Electronic |
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