No. |
Part Name |
Description |
Manufacturer |
31 |
2N3962 |
Silicon PNP Planar Transistor (in german) |
ITT Semiconductors |
32 |
2N3963 |
Silicon PNP Planar Transistor (in german) |
ITT Semiconductors |
33 |
2N3964 |
Silicon PNP Planar Transistor (in german) |
ITT Semiconductors |
34 |
2N4030 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
35 |
2N4031 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
36 |
2N4032 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
37 |
2N4033 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
38 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
39 |
2N929 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
40 |
2N930 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
41 |
AC127 |
NPN Germanium Transistor |
Siemens |
42 |
AC127 compl. paired |
NPN Germanium Transistor |
Siemens |
43 |
AC176 |
N-P-N Germanium Medium Power Transistor |
Mullard |
44 |
AC176 |
NPN Germanium AF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
45 |
AC176 |
NPN Germanium Transistor for AF power stages up to 3.5 Watt |
Siemens |
46 |
AC176K |
NPN Germanium Transistor for AF power stages up to 3.5 Watt |
Siemens |
47 |
AC187 |
N-P-N Germanium Medium Power Transistor |
Mullard |
48 |
AC187K |
NPN Germanium Transistor for AF power stages up to 3.5 Watt |
Siemens |
49 |
AD161 |
NPN Germanium Transistor for AF power stages |
Siemens |
50 |
AD161 paired |
NPN Germanium Transistor for AF power stages |
Siemens |
51 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
52 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
53 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
54 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
55 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
56 |
ASY28 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
57 |
ASY29 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
58 |
BBY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
59 |
BBY25 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
60 |
BBY26 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
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