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Datasheets for N HIGH PO

Datasheets found :: 272
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No. Part Name Description Manufacturer
31 2N6653/2 Silicon high power, high voltage switching NPN transistor - metal case IPRS Baneasa
32 2N6653/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
33 2N6653/3 Silicon high power, high voltage switching NPN transistor - metal case IPRS Baneasa
34 2N6653/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
35 2N6653/4 Silicon high power, high voltage switching NPN transistor - metal case IPRS Baneasa
36 2N6653/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
37 2N6653A Silicon high power, high voltage switching NPN transistor - metal case IPRS Baneasa
38 2N6653A Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
39 2N6653B Silicon high power, high voltage switching NPN transistor - metal case IPRS Baneasa
40 2N6653B Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
41 2N6654 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
42 2N6654/1 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
43 2N6654/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
44 2N6654/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
45 2N6654/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
46 2N6654A Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
47 2N6654B Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
48 2N6655/1 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
49 2N6655/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
50 2N6655/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
51 2N6655/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
52 2N7368JAN NPN HIGH POWER SILICON TRANSISTOR Microsemi
53 2N7368JANTX NPN HIGH POWER SILICON TRANSISTOR Microsemi
54 2N7368JANTXV NPN HIGH POWER SILICON TRANSISTOR Microsemi
55 2SA1007 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
56 2SA1007A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
57 2SB339H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor
58 2SB340H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor
59 2SB341H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor
60 2SC2337 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC


Datasheets found :: 272
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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