No. |
Part Name |
Description |
Manufacturer |
31 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
32 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
33 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
34 |
2N6653/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
35 |
2N6653/4 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
36 |
2N6653/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
37 |
2N6653A |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
38 |
2N6653A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
39 |
2N6653B |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
40 |
2N6653B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
41 |
2N6654 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
42 |
2N6654/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
43 |
2N6654/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
44 |
2N6654/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
45 |
2N6654/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
46 |
2N6654A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
47 |
2N6654B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
48 |
2N6655/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
49 |
2N6655/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
50 |
2N6655/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
51 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
52 |
2N7368JAN |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
53 |
2N7368JANTX |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
54 |
2N7368JANTXV |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
55 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
56 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
57 |
2SB339H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
58 |
2SB340H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
59 |
2SB341H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
60 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
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