No. |
Part Name |
Description |
Manufacturer |
31 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
32 |
1416GN-120E |
GaN Transistors |
Microsemi |
33 |
1416GN-120EL |
GaN Transistors |
Microsemi |
34 |
1416GN-120EP |
GaN Transistors |
Microsemi |
35 |
1416GN-600V |
GaN Transistors |
Microsemi |
36 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
37 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
38 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
39 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
40 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
41 |
152NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
42 |
153NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
43 |
154NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
44 |
155NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
45 |
156NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
46 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
47 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
48 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
49 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
50 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
51 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
52 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
53 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
54 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
55 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
56 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
57 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
58 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
59 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
60 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
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