| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5635E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 32 |
1N5636 |
Transient Voltage Suppressor |
Microsemi |
| 33 |
1N5636 |
Diode TVS Single Uni-Dir 10.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 34 |
1N5636A |
Transient Voltage Suppressor |
Microsemi |
| 35 |
1N5636A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 36 |
1N5636E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 37 |
1N5637 |
Transient Voltage Suppressor |
Microsemi |
| 38 |
1N5637 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 39 |
1N5637A |
Transient Voltage Suppressor |
Microsemi |
| 40 |
1N5637A |
Diode TVS Single Uni-Dir 12.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 41 |
1N5637E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 42 |
1N5638 |
Transient Voltage Suppressor |
Microsemi |
| 43 |
1N5638 |
Diode TVS Single Uni-Dir 12.9V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 44 |
1N5638A |
Transient Voltage Suppressor |
Microsemi |
| 45 |
1N5638A |
Diode TVS Single Uni-Dir 13.6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 46 |
1N5638E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 47 |
1N5639 |
Transient Voltage Suppressor |
Microsemi |
| 48 |
1N5639 |
Diode TVS Single Uni-Dir 14.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 49 |
1N5639A |
Transient Voltage Suppressor |
Microsemi |
| 50 |
1N5639A |
Diode TVS Single Uni-Dir 15.3V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 51 |
1N5639E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 52 |
2N563 |
Germanium PNP Transistor |
Motorola |
| 53 |
2N5630 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 54 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 55 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 56 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 57 |
2N5630 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 58 |
2N5630 |
Bipolar NPN Device |
SemeLAB |
| 59 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 60 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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