No. |
Part Name |
Description |
Manufacturer |
31 |
1N5712 |
Schottky Barrier Diodes for General Purpose Applications |
Agilent (Hewlett-Packard) |
32 |
1N5712 |
Diode Schottky 20V 0.075A 2-Pin DO-35 |
New Jersey Semiconductor |
33 |
1N5712-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
34 |
1N5712-1 |
Si Schottky Rectifier Diodes |
Microsemi |
35 |
1N5712-1E3 |
Si Schottky Rectifier Diodes |
Microsemi |
36 |
1N5712UB |
Si Schottky Rectifier Diodes |
Microsemi |
37 |
1N5712UBCA |
Si Schottky Rectifier Diodes |
Microsemi |
38 |
1N5712UBCC |
Si Schottky Rectifier Diodes |
Microsemi |
39 |
1N5712UBD |
Si Schottky Rectifier Diodes |
Microsemi |
40 |
1N5712UR-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
41 |
1N5712UR-1 |
Si Schottky Rectifier Diodes |
Microsemi |
42 |
1N5719 |
SILICON PIN DIODE |
Advanced Semiconductor |
43 |
1N5719 |
Diode PIN Attenuator/Switch 150V 2-Pin Case 15 Bag |
New Jersey Semiconductor |
44 |
2N571 |
Germanium PNP Transistor |
Motorola |
45 |
2N5710 |
RF transistor |
Texas Instruments |
46 |
2N5711 |
RF transistor |
Texas Instruments |
47 |
2N5712 |
RF transistor |
Texas Instruments |
48 |
2N5713 |
RF transistor |
Texas Instruments |
49 |
2N5719 |
Thyristor SCR 60V 15A 3-Pin TO-39 |
New Jersey Semiconductor |
50 |
AN5710 |
B/W TV VIEDO IF Amplifer, RF AGC Circuit |
Panasonic |
51 |
AN5712 |
B/W TV Video IF Amplifier, RF AGC Circuit |
Panasonic |
52 |
AN5715 |
Low Voltage VIF and SIF IC |
Panasonic |
53 |
AN5715K |
Low Voltage VIF and SIF IC |
Panasonic |
54 |
AN5715S |
Low Voltage VIF and SIF IC |
Panasonic |
55 |
CDS1N5711-1 |
Si Schottky Rectifier Diodes |
Microsemi |
56 |
CDS1N5711UR-1 |
Si Schottky Rectifier Diodes |
Microsemi |
57 |
CDS1N5712-1 |
Si Schottky Rectifier Diodes |
Microsemi |
58 |
EN5715 |
Audio Power Amplifier, Class AB, 30W × 2ch, BTL |
ON Semiconductor |
59 |
JAN1N5711 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
60 |
JAN1N5711-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
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