| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 32 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
| 33 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 34 |
MGW14N60ED |
Insulated Gate Bipolar Transistor |
ON Semiconductor |
| 35 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 36 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
| 37 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 38 |
MTA1N60E |
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor |
Motorola |
| 39 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 40 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 41 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 42 |
MTB2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS |
Motorola |
| 43 |
MTB2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 44 |
MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 45 |
MTB3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS |
Motorola |
| 46 |
MTB3N60E |
D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 47 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 48 |
MTB6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
| 49 |
MTB6N60E1 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
| 50 |
MTB6N60E1 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 51 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 52 |
MTD1N60E |
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
Motorola |
| 53 |
MTD1N60E |
OBSOLETE - 1 Amp DPAK Surface Mount Products, N-Channel, VDSS 600 |
ON Semiconductor |
| 54 |
MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 55 |
MTP10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 56 |
MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 57 |
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
Motorola |
| 58 |
MTP1N60E |
OBSOLETE - 1 Amp TO-220AB, N-Channel, VDSS 600 |
ON Semiconductor |
| 59 |
MTP1N60E-D |
Power MOSFET 1 Amp, 600 Volts N-Channel TO-220 |
ON Semiconductor |
| 60 |
MTP2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
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