Datasheets for N651

Datasheets found :: 119 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
31	2N6512	Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
32	2N6512	Silicon NPN Power Transistors TO-3 package	Savantic
33	2N6512	Bipolar NPN Device	SemeLAB
34	2N6513	Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
35	2N6513	Silicon NPN Power Transistors TO-3 package	Savantic
36	2N6514	Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
37	2N6514	Silicon NPN Power Transistors TO-3 package	Savantic
38	2N6515	Leaded Small Signal Transistor General Purpose	Central Semiconductor
39	2N6515	0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE	Continental Device India Limited
40	2N6515	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
41	2N6515	Ic=500mA, Vce=10V transistor	MCC
42	2N6515	High Voltage Transistor 625mW	Micro Commercial Components
43	2N6515	High Voltage Transistors	ON Semiconductor
44	2N6515	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
45	2N6515-D	High Voltage Transistors	ON Semiconductor
46	2N6515RLRM	High Voltage Transistors	ON Semiconductor
47	2N6516	Leaded Small Signal Transistor General Purpose	Central Semiconductor
48	2N6516	0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE	Continental Device India Limited
49	2N6516	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
50	2N6516	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
51	2N6516	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
52	2N6517	Leaded Small Signal Transistor General Purpose	Central Semiconductor
53	2N6517	0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE	Continental Device India Limited
54	2N6517	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
55	2N6517	Ic=500mA, Vce=10V transistor	MCC
56	2N6517	High Voltage Transistor 625mW	Micro Commercial Components
57	2N6517	High Voltage Transistors	ON Semiconductor
58	2N6517	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
59	2N6517	High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
60	2N6517	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Zetex Semiconductors

Datasheets found :: 119 Page: | 1 | 2 | 3 | 4 |