No. |
Part Name |
Description |
Manufacturer |
31 |
1N6643 |
SWITCHING DIODES |
Compensated Devices Incorporated |
32 |
1N6643 |
Signal or Computer Diode |
Microsemi |
33 |
1N6643 |
Signal or Computer Diode |
Microsemi |
34 |
1N6643U |
SWITCHING DIODES |
Compensated Devices Incorporated |
35 |
1N6643U |
Signal or Computer Diode |
Microsemi |
36 |
1N6643U |
Signal or Computer Diode |
Microsemi |
37 |
1N6643US |
SWITCHING DIODES |
Compensated Devices Incorporated |
38 |
1N6643US |
Signal or Computer Diode |
Microsemi |
39 |
1N6643US |
Signal or Computer Diode |
Microsemi |
40 |
1N6643USe3 |
Ultra Fast Rectifier (trr less than 100ns) |
Microsemi |
41 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
42 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
43 |
2N6648 |
PNP Darlington Transistor |
Microsemi |
44 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
45 |
2N6648 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
46 |
2N6648 |
Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
47 |
2N6648E3 |
Darlington Transistors |
Microsemi |
48 |
2N6649 |
Leaded Power Transistor Darlington |
Central Semiconductor |
49 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
50 |
2N6649 |
PNP Darlington Transistor |
Microsemi |
51 |
2N6649 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
52 |
2N6649 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
53 |
2N6649 |
Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
54 |
2N6649E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
55 |
EN6648 |
P-Channel Small Signal MOSFET, -30V, -0.1A, 10.4Ohm, Single SSFP |
ON Semiconductor |
56 |
JAN1N6640 |
Signal or Computer Diode |
Microsemi |
57 |
JAN1N6640US |
Signal or Computer Diode |
Microsemi |
58 |
JAN1N6641 |
Signal or Computer Diode |
Microsemi |
59 |
JAN1N6641US |
Signal or Computer Diode |
Microsemi |
60 |
JAN1N6642 |
Signal or Computer Diode |
Microsemi |
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