| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N5485 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 32 |
2N5485 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 33 |
2N5486 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 34 |
2N5486 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 35 |
2N5911 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 36 |
2N5911 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 37 |
2N5911-12 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 38 |
2N5911_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 39 |
2N5911_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 40 |
2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 41 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 42 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 43 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 44 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 45 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 46 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 47 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 48 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 49 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 50 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 51 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 52 |
2SA1048L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 53 |
2SA1049 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 54 |
2SA1145 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 55 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 56 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 57 |
2SA1203 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 58 |
2SA1204 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 59 |
2SA1226 |
HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 60 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
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