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Datasheets for NEAR

Datasheets found :: 61181
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No. Part Name Description Manufacturer
31 1N751 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). Fairchild Semiconductor
32 1N751A 5.1 V, 400 mW silicon linear diode BKC International Electronics
33 1N752 5.6 V, 400 mW silicon linear diode BKC International Electronics
34 1N752 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). Fairchild Semiconductor
35 1N752A 5.6 V, 400 mW silicon linear diode BKC International Electronics
36 1N753 6.2 V, 400 mW silicon linear diode BKC International Electronics
37 1N753 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). Fairchild Semiconductor
38 1N753A 6.2 V, 400 mW silicon linear diode BKC International Electronics
39 1N754 6.8 V, 400 mW silicon linear diode BKC International Electronics
40 1N754 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). Fairchild Semiconductor
41 1N754A 6.8 V, 400 mW silicon linear diode BKC International Electronics
42 1N755 7.5 V, 400 mW silicon linear diode BKC International Electronics
43 1N755 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). Fairchild Semiconductor
44 1N755A 7.5 V, 400 mW silicon linear diode BKC International Electronics
45 1N756 8.2 V, 400 mW silicon linear diode BKC International Electronics
46 1N756 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). Fairchild Semiconductor
47 1N756A 8.2 V, 400 mW silicon linear diode BKC International Electronics
48 1N757 9.1 V, 400 mW silicon linear diode BKC International Electronics
49 1N757 500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). Fairchild Semiconductor
50 1N757A 9.1 V, 400 mW silicon linear diode BKC International Electronics
51 1N758 10 V, 400 mW silicon linear diode BKC International Electronics
52 1N758 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). Fairchild Semiconductor
53 1N758A 10 V, 400 mW silicon linear diode BKC International Electronics
54 1N759 12 V, 400 mW silicon linear diode BKC International Electronics
55 1N759 500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). Fairchild Semiconductor
56 1N759A 12 V, 400 mW silicon linear diode BKC International Electronics
57 20L08 2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
58 20L15 2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
59 2100 2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
60 278R12 BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 2A OUTPUT LOW DROP VOLTAGE REGULATOR) Korea Electronics (KEC)


Datasheets found :: 61181
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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