| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AMD-K6-166ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 166MHz |
Advanced Micro Devices |
| 32 |
AMD-K6-200ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz |
Advanced Micro Devices |
| 33 |
AMD-K6-233ANR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 233MHz |
Advanced Micro Devices |
| 34 |
AMD-K6_200AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 200MHz |
Advanced Micro Devices |
| 35 |
AMD-K6_233AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 233MHz |
Advanced Micro Devices |
| 36 |
AMD-K6_266AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 266MHz |
Advanced Micro Devices |
| 37 |
AMD-K6_300AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 300MHz |
Advanced Micro Devices |
| 38 |
AMS682 |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
| 39 |
AMS682CP |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
| 40 |
AMS682CS |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
| 41 |
AMS682EP |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
| 42 |
AMS682ES |
INVERTING VOLTAGE DOUBLER |
Advanced Monolithic Systems |
| 43 |
AN280 |
CONTROLLING VOLTAGE TRANSIENTS IN FULL BRIDGE DRIVERS APPLICATIONS |
SGS Thomson Microelectronics |
| 44 |
AN5079 |
TV Tuning Voltage Circuit |
Panasonic |
| 45 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 46 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 47 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 48 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 49 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 50 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 51 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 52 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 53 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 54 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 55 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 56 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 57 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 58 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 59 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 60 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| | | |
