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Datasheets for NOU

Datasheets found :: 32308
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No. Part Name Description Manufacturer
31 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
32 3DSD1280-883D-S 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
33 3DSD1280-PROTO 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
34 3PHASEPWM 3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines International Rectifier
35 40102BP 8-stage presettable synchronous down counter (2-Decade BCD Type) TOSHIBA
36 40103BP 8-stage presettable synchronous down counter (8-Bit Binary Type) TOSHIBA
37 4014BP 8-stage static shift register (synchronous parallel or serial input/serial output) TOSHIBA
38 40160BP DECADE WITH ASYNCHRONOUS CLEAR TOSHIBA
39 40161BP Binary with asynchronous clear TOSHIBA
40 40162BP Decade with synchronous clear TOSHIBA
41 40163BP Binary with synchronous clear TOSHIBA
42 40194BP 4-Bit Bidirectional universal shift register with asynchronous master reset TOSHIBA
43 4021BP 8-stage static shift register (asynchronous parallel input or synchronous serial input/serial output) TOSHIBA
44 4021BP 8-stage static shift register (asynchronous parallel input or synchronous serial input/serial output) TOSHIBA
45 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
46 42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution Inc
47 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
48 4TPB220ML N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages National Semiconductor
49 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
50 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
51 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
52 54160 Synchronous presettable BCD decade counters Fairchild Semiconductor
53 54161DM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
54 54161DMQB 7 V, synchronous 4-bit counter National Semiconductor
55 54161FM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
56 54161FMQB 7 V, synchronous 4-bit counter National Semiconductor
57 54162 Synchronous presettable BCD decade counters Fairchild Semiconductor
58 54163DM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
59 54163FM V(cc): +5V; synchronous presettable binary counter Fairchild Semiconductor
60 54167 Synchronous decade rate multiplier Fairchild Semiconductor


Datasheets found :: 32308
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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