No. |
Part Name |
Description |
Manufacturer |
31 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
32 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
33 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
34 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
35 |
40102BP |
8-stage presettable synchronous down counter (2-Decade BCD Type) |
TOSHIBA |
36 |
40103BP |
8-stage presettable synchronous down counter (8-Bit Binary Type) |
TOSHIBA |
37 |
4014BP |
8-stage static shift register (synchronous parallel or serial input/serial output) |
TOSHIBA |
38 |
40160BP |
DECADE WITH ASYNCHRONOUS CLEAR |
TOSHIBA |
39 |
40161BP |
Binary with asynchronous clear |
TOSHIBA |
40 |
40162BP |
Decade with synchronous clear |
TOSHIBA |
41 |
40163BP |
Binary with synchronous clear |
TOSHIBA |
42 |
40194BP |
4-Bit Bidirectional universal shift register with asynchronous master reset |
TOSHIBA |
43 |
4021BP |
8-stage static shift register (asynchronous parallel input or synchronous serial input/serial output) |
TOSHIBA |
44 |
4021BP |
8-stage static shift register (asynchronous parallel input or synchronous serial input/serial output) |
TOSHIBA |
45 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
46 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
47 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
48 |
4TPB220ML |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
49 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
50 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
51 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
52 |
54160 |
Synchronous presettable BCD decade counters |
Fairchild Semiconductor |
53 |
54161DM |
V(cc): +5V; synchronous presettable binary counter |
Fairchild Semiconductor |
54 |
54161DMQB |
7 V, synchronous 4-bit counter |
National Semiconductor |
55 |
54161FM |
V(cc): +5V; synchronous presettable binary counter |
Fairchild Semiconductor |
56 |
54161FMQB |
7 V, synchronous 4-bit counter |
National Semiconductor |
57 |
54162 |
Synchronous presettable BCD decade counters |
Fairchild Semiconductor |
58 |
54163DM |
V(cc): +5V; synchronous presettable binary counter |
Fairchild Semiconductor |
59 |
54163FM |
V(cc): +5V; synchronous presettable binary counter |
Fairchild Semiconductor |
60 |
54167 |
Synchronous decade rate multiplier |
Fairchild Semiconductor |
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