No. |
Part Name |
Description |
Manufacturer |
31 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
32 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
33 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
34 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
35 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
36 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
37 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
38 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
39 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
40 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
41 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
42 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
43 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
44 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
45 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
46 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
47 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
48 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
49 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
50 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
51 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
52 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
53 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
54 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
55 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
56 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
57 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
58 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
59 |
1DI200Z-100 |
POWER TRANSISTOR MODULE |
Fuji Electric |
60 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
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