No. |
Part Name |
Description |
Manufacturer |
31 |
1N5940B |
1 to 3 watt zener regulator diode |
Motorola |
32 |
1N5941B |
1 to 3 watt zener regulator diode |
Motorola |
33 |
1N5942B |
1 to 3 watt zener regulator diode |
Motorola |
34 |
1N5943B |
1 to 3 watt zener regulator diode |
Motorola |
35 |
1N5944B |
1 to 3 watt zener regulator diode |
Motorola |
36 |
1N5945B |
1 to 3 watt zener regulator diode |
Motorola |
37 |
1N5946B |
1 to 3 watt zener regulator diode |
Motorola |
38 |
1N5947B |
1 to 3 watt zener regulator diode |
Motorola |
39 |
1N5948B |
1 to 3 watt zener regulator diode |
Motorola |
40 |
1N5949B |
1 to 3 watt zener regulator diode |
Motorola |
41 |
1N5950B |
1 to 3 watt zener regulator diode |
Motorola |
42 |
1N5951B |
1 to 3 watt zener regulator diode |
Motorola |
43 |
1N5952B |
1 to 3 watt zener regulator diode |
Motorola |
44 |
1N5953B |
1 to 3 watt zener regulator diode |
Motorola |
45 |
1N5954B |
1 to 3 watt zener regulator diode |
Motorola |
46 |
1N5955B |
1 to 3 watt zener regulator diode |
Motorola |
47 |
1N5956B |
1 to 3 watt zener regulator diode |
Motorola |
48 |
1N79 |
Meter Rectifier - to 3,000 MHz |
Motorola |
49 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
50 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
51 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
52 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
53 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
54 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
55 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
56 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
57 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
58 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
59 |
2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications |
SANYO |
60 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
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