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Datasheets for O 3

Datasheets found :: 48853
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No. Part Name Description Manufacturer
31 1N5940B 1 to 3 watt zener regulator diode Motorola
32 1N5941B 1 to 3 watt zener regulator diode Motorola
33 1N5942B 1 to 3 watt zener regulator diode Motorola
34 1N5943B 1 to 3 watt zener regulator diode Motorola
35 1N5944B 1 to 3 watt zener regulator diode Motorola
36 1N5945B 1 to 3 watt zener regulator diode Motorola
37 1N5946B 1 to 3 watt zener regulator diode Motorola
38 1N5947B 1 to 3 watt zener regulator diode Motorola
39 1N5948B 1 to 3 watt zener regulator diode Motorola
40 1N5949B 1 to 3 watt zener regulator diode Motorola
41 1N5950B 1 to 3 watt zener regulator diode Motorola
42 1N5951B 1 to 3 watt zener regulator diode Motorola
43 1N5952B 1 to 3 watt zener regulator diode Motorola
44 1N5953B 1 to 3 watt zener regulator diode Motorola
45 1N5954B 1 to 3 watt zener regulator diode Motorola
46 1N5955B 1 to 3 watt zener regulator diode Motorola
47 1N5956B 1 to 3 watt zener regulator diode Motorola
48 1N79 Meter Rectifier - to 3,000 MHz Motorola
49 24AA32A The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r Microchip
50 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
51 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
52 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
53 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
54 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
55 2N6367 NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz Motorola
56 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
57 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
58 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
59 2SB633 Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications SANYO
60 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation


Datasheets found :: 48853
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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