No. |
Part Name |
Description |
Manufacturer |
31 |
PM200-18C |
Medical switching power supply. Maximum output power 200 W. Output #1: Vnom 48V, Imin 0.3A, Imax 4.2A. |
International Power Sources |
32 |
PU150-18 |
Switching power supply, 150W. Output #1: Vnom 48V, Imin 0A, Imax 3.1A, Ipeak 3,6A. |
International Power Sources |
33 |
PU150-18B |
Switching power supply, 150W. Output #1: Vnom 48V, Imin 0A, Imax 3.1A, Ipeak 3,6A. |
International Power Sources |
34 |
PU200-18B |
Switching power supply, 200W. Output #1: Vnom 48V, Imin 0.3A, Imax 4.2A. |
International Power Sources |
35 |
PU200-18C |
Switching power supply, 200W. Output #1: Vnom 48V, Imin 0.3A, Imax 4.2A. |
International Power Sources |
36 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
37 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
38 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
39 |
S1L9251X |
CD-ROM 48X RF AMP |
Samsung Electronic |
40 |
S5L9250B |
CD-ROM 48X Data Sheet |
Samsung Electronic |
41 |
S5L9250B |
CD-ROM 48X 1 chip |
Samsung Electronic |
42 |
S5L9250B01-Q0R0 |
The CD-ROM 48X 1 chip receives the input signal read from the CD-DA/VIDEO-CD/CD-ROM disc after handling by the RF amplifier. |
Samsung Electronic |
43 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
44 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
45 |
T2302D |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. |
General Electric Solid State |
46 |
T2800D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
47 |
T2802D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
48 |
T6000D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
49 |
T6001D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
50 |
T6006D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
51 |
TC4626 |
The TC4626/4627 are single CMOS high speed drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 volts. The internal voltage booster will produce a VBOOST potential up to 12 volts above V |
Microchip |
52 |
TC4627 |
The TC4626/4627 are single CMOS high speed drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 volts. The internal voltage booster will produce a VBOOST potential up to 12 volts above V |
Microchip |
53 |
TMP47C920AG |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
54 |
TMP47C921AG |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
55 |
TMP47C940AE |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
56 |
TMP47C940AG |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
57 |
TMP47C941AE |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
58 |
TMP47C941AG |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
59 |
TMP47C946AG |
ROM 4096 x 8-bit, RAM 256 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
60 |
TMP47C952AE |
ROM 4096 x 8-bit, RAM 768 x 4-bit, CMOS 4-bit microcontroller |
TOSHIBA |
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