| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BQ27541DRZT |
Single Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration 12-SON -40 to 85 |
Texas Instruments |
| 32 |
BQ27541DRZT-V200 |
Single Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration 12-SON -40 to 85 |
Texas Instruments |
| 33 |
BQ28550DRZR |
Single Cell Li-Ion Battery Gas Gauge and Protection 12-SON -40 to 85 |
Texas Instruments |
| 34 |
BQ28550DRZR-R1 |
Single Cell Li-Ion Battery Gas Gauge and Protection 12-SON -40 to 85 |
Texas Instruments |
| 35 |
BQ28550DRZT |
Single Cell Li-Ion Battery Gas Gauge and Protection 12-SON -40 to 85 |
Texas Instruments |
| 36 |
BQ28550DRZT-R1 |
Single Cell Li-Ion Battery Gas Gauge and Protection 12-SON -40 to 85 |
Texas Instruments |
| 37 |
FDC2112-Q1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 38 |
FDC2112QDNTRQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 39 |
FDC2112QDNTTQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 40 |
FDC2212-Q1 |
2-channel, Noise-immune, AEC-Q100 qualified, 28-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 41 |
FDC2212QDNTRQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 28-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 42 |
FDC2212QDNTTQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 28-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 43 |
KZY07 |
Zener diode for stabilisation 12V |
Tesla Elektronicke |
| 44 |
KZY86 |
Zener diode for stabilisation 12.6V |
Tesla Elektronicke |
| 45 |
M28F101-100P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 100ns Access |
SGS Thomson Microelectronics |
| 46 |
M28F101-120N1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 120ns Access (TSOP) |
SGS Thomson Microelectronics |
| 47 |
M28F101-150K1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
| 48 |
M28F101-150P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
| 49 |
M28F101-150P6 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
| 50 |
M377S2950MT3 |
128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 51 |
M464S0924FTS |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
Samsung Electronic |
| 52 |
M464S0924FTS-C(L)7A |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
Samsung Electronic |
| 53 |
M464S1724FTS-C(L)7A |
144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
Samsung Electronic |
| 54 |
MAX5234 |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 55 |
MAX5234-MAX5235 |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 56 |
MAX5234AEUB |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 57 |
MAX5234AEUB+ |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 58 |
MAX5234BEUB |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 59 |
MAX5234BEUB+ |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| 60 |
MAX5235 |
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs |
MAXIM - Dallas Semiconductor |
| | | |
