No. |
Part Name |
Description |
Manufacturer |
31 |
1N754A |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
32 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
33 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
34 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
35 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
36 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
37 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
38 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
39 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
40 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
41 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
42 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
43 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
44 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
45 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
46 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
47 |
232B |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
48 |
232E |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
49 |
2N3010 |
NPN silicon low-power transistor |
Motorola |
50 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
51 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
52 |
2N3962 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
53 |
2N3963 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
54 |
2N3964 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
55 |
2N3965 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
56 |
2N4248 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
57 |
2N4249 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
58 |
2N4250 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
59 |
2N5224 |
General Purpose NPN Silicon Low-level Switching transistor |
ITT Semiconductors |
60 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
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