| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AD8290 |
G = 50, CMOS Sensor Amplifier with Current Excitation |
Analog Devices |
| 32 |
ADUM3190 |
2.5kV rms Isolated Error Amplifier |
Analog Devices |
| 33 |
ADUM4190 |
5kV rms Isolated Error Amplifier |
Analog Devices |
| 34 |
AN-3749 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 35 |
AN5720 |
B/W TV Video Detector AMplifier / IF AGC Circuit |
Matsushita Electric Works(Nais) |
| 36 |
AN5720 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 37 |
AN5722 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 38 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 39 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
| 40 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 41 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 42 |
BSY51 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 43 |
BSY52 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 44 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 45 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 46 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 47 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 48 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 49 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 50 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 51 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 52 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 53 |
BSY86 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 54 |
BSY87 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 55 |
BSY88 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 56 |
BSY90 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 57 |
C2719 |
Photosensor amplifier |
Hamamatsu Corporation |
| 58 |
C6386 |
Photosensor amplifier |
Hamamatsu Corporation |
| 59 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
| 60 |
C9051 |
Photosensor amplifier |
Hamamatsu Corporation |
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