No. |
Part Name |
Description |
Manufacturer |
31 |
AMC1200SDUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
32 |
AMC1200STDUBRQ1 |
Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
33 |
AMC1200TDWVRQ1 |
Automotive Catalog, 4kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
34 |
AN469 |
USING THE L6506 FOR CURRENT CONTROL OF STEPPER MOTOR |
SGS Thomson Microelectronics |
35 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
36 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
37 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
38 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
39 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
40 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
41 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
42 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
43 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
44 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
45 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
46 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
47 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
48 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
49 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
50 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
51 |
BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
52 |
BC327-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
53 |
BC328 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
54 |
BC328-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
55 |
BC328-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
56 |
BC328-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
57 |
BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
58 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
59 |
BC337-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
60 |
BC337-25 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
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