No. |
Part Name |
Description |
Manufacturer |
31 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
32 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
33 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
34 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
35 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
36 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
37 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
38 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
39 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
40 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
41 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
42 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
43 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
44 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
45 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
46 |
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) |
Isahaya Electronics Corporation |
47 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
48 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
49 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
50 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
51 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
52 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
53 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
54 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
55 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
56 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
57 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
58 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
59 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
60 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
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