| No. |
Part Name |
Description |
Manufacturer |
| 31 |
232266197011 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 32 |
232266197012 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 33 |
232266197013 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 34 |
232266197016 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 35 |
232266197018 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 36 |
232266197019 |
Surface Mount PTC Thermistors For Overload Protection |
Vishay |
| 37 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 38 |
2EL2 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 39 |
2EL3 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 40 |
2EL4 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 41 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 42 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 43 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 44 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 45 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 46 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 47 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 48 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 49 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 50 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 51 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 52 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 53 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 54 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 55 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 56 |
2SC9018 |
AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER |
USHA India LTD |
| 57 |
323 |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 58 |
323B |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 59 |
323C |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 60 |
3970-TYPE |
1550 nm transmitter. Connector options: FC/APC bulkhead, tight key;SC/APC bulkhead; E-2000/APC bulkhead. |
Agere Systems |
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