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Datasheets for P ME

Datasheets found :: 521
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
32 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
33 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
34 2N3867 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. Continental Device India Limited
35 2N4030 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
36 2N4031 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
37 2N4031 80 V, PNP medium power transistor Philips
38 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
39 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
40 2N4033 80 V, PNP medium power transistor Philips
41 2N4033CSM4 HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE SemeLAB
42 2N4036 1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
43 2N4036 Silicon p-n-p medium power switching transistor Mullard
44 2N4037 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. Continental Device India Limited
45 2N4234 6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
46 2N4235 6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
47 2N4236 6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
48 2N4898 Silicon P-N-P medium power transistor. 40V, 25W. General Electric Solid State
49 2N4899 Silicon P-N-P medium power transistor. 60V, 25W. General Electric Solid State
50 2N4900 Silicon P-N-P medium power transistor. 80V, 25W. General Electric Solid State
51 2N5415 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. Continental Device India Limited
52 2N5416 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. Continental Device India Limited
53 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
54 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
55 2N5954 Silicon P-N-P medium-power transistor. -90V, 40W. General Electric Solid State
56 2N5955 Silicon P-N-P medium-power transistor. -70V, 40W. General Electric Solid State
57 2N5956 Silicon P-N-P medium-power transistor. -50V, 40W. General Electric Solid State
58 2N6034 PNP medium power darlington transistor, 4A , 40V SGS Thomson Microelectronics
59 2N6035 PNP medium power darlington transistor, 4A , 60V SGS Thomson Microelectronics
60 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State


Datasheets found :: 521
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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