No. |
Part Name |
Description |
Manufacturer |
31 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
32 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
33 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
34 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
35 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
36 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
37 |
2N4031 |
80 V, PNP medium power transistor |
Philips |
38 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
39 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
40 |
2N4033 |
80 V, PNP medium power transistor |
Philips |
41 |
2N4033CSM4 |
HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
42 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
43 |
2N4036 |
Silicon p-n-p medium power switching transistor |
Mullard |
44 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
45 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
46 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
47 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
48 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
49 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
50 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
51 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
52 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
53 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
54 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
55 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
56 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
57 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
58 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
59 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
60 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
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