| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KDA0478PL-100 |
100MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
| 32 |
KDA0478PL-120 |
120MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
| 33 |
LC338128PL-10 |
1 MEG (131072 words x 8 bit) pseudo-SRAM |
SANYO |
| 34 |
LC33832PL-10 |
256K (32768word x 8bit) Pseudo-SRAM |
SANYO |
| 35 |
LM2512A |
Mobile Pixel Link (MPL-1) 24Bit RGB Display Interf Serializer w/ Optional Dithering & Look Up Table |
Texas Instruments |
| 36 |
LM2512ASM/NOPB |
Mobile Pixel Link (MPL-1) 24Bit RGB Display Interf Serializer w/ Optional Dithering & Look Up Table 49-NFBGA -30 to 85 |
Texas Instruments |
| 37 |
LM2512ASN/NOPB |
Mobile Pixel Link (MPL-1) 24Bit RGB Display Interf Serializer w/ Optional Dithering & Look Up Table 40-X2QFN -30 to 85 |
Texas Instruments |
| 38 |
MPL-102S |
Ultrafast recovery diodes |
Sanken |
| 39 |
MPL-1036S |
Ultrafast recovery diodes |
Sanken |
| 40 |
PL-1061 |
Mobile computing system: MIPS R3000 compatible 32-bit RISC core with MAC co-processor running at maximum speed of 100MHz |
Prolific |
| 41 |
PL-11 |
Low Power AC Transformer |
Vishay |
| 42 |
PL-12 |
Low Power AC Transformer |
Vishay |
| 43 |
PL-13 |
Low Power AC Transformer |
Vishay |
| 44 |
PL-14 |
Low Power AC Transformer |
Vishay |
| 45 |
TC514100APL-10 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
| 46 |
TC514400APL-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 47 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 48 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 49 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 50 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 51 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 52 |
TC55257APL-10 |
TOSHIBA MOS MEMORY PRODUCTS |
TOSHIBA |
| 53 |
TC55257APL-12 |
TOSHIBA MOS MEMORY PRODUCTS |
TOSHIBA |
| 54 |
TC55257BPL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
| 55 |
TC55257BPL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
| 56 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 57 |
TC55257CPL-10 |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM |
TOSHIBA |
| 58 |
TC55257CSPL-10 |
SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM |
TOSHIBA |
| 59 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
| 60 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
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